sep.2000 ac t 1. 2. 3. 4. 5. 6. 7. 8. 9. v v v v v v v 10. 11. 12. 13. 14. 15. 16. u u vv w w wpc upi vpi wpi nc ni p n p p n n upc f o v vpc 17. 18. 19. b wf o o vf o uf b s m m ad ag ag k j j e u u u ab q ab r c f w a w u d x p x 78 9 10 11 13 15 1234 56 n v y (4 typ.) w u bp aa - thd (6 typ.) z - dia. (4 typ.) ad (15 typ.) 12 14 16 18 17 19 r v v cc s i gnd gnd out upi v u fo up upc f o in v cc s i gnd gnd out f o in v cc s i gnd gnd out f o in v v fo v v fo vpi v vp vpc wpi w wp wpc v cc s i gnd gnd out f o in v cc s i gnd gnd out f o in u n v cc s i gnd gnd out f o in v v w n v ni n nc temp f o p u v w n b v cc s i gnd gnd out f o in r b ae n h v g af l 2.54 mm dia. (2 typ.) 0.5 mm sq. pin (19 typ.) description: mitsubishi intelligent power mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20khz. built-in control circuits pro- vide optimum gate drive and pro- tection for the igbt and free-wheel diode power devices. features: u complete output power circuit u gate drive circuit u protection logic C short circuit C over current C over temperature C under voltage applications: u inverters u ups u motion/servo control u power supplies ordering information: example: select the complete part number from the table below -i.e. PM50RSA120 is a 1200v, 50 ampere intelligent power mod- ule. type current rating v ces amperes volts (x 10) pm 50 120 dimensions inches millimeters a 4.33 0.04 110.0 1.0 b 3.74 0.02 95.0 0.5 c 3.50 0.04 89.0 1.0 d 3.27 83.0 e 2.91 0.02 74.0 0.5 f 2.44 62.0 g 1.28 32.6 h 1.24 31.6 j 1.02 26.0 k 0.94 24.0 l 0.87 +0.06/-022.0 +1.5/-0.0 m 0.79 20.0 n 0.76 19.4 p 0.75 19.0 q 0.708 17.98 r 0.670 17.02 dimensions inches millimeters s 0.67 17.0 t 0.52 13.2 u 0.39 10.0 v 0.28 7.0 w 0.30 7.5 x 0.24 6.0 y 0.24 rad. rad. 6.0 z 0.22 dia. dia. 5.5 aa metric m5 m5 ab 0.127 3.22 ac 0.10 2.6 ad 0.08 2.0 ae 0.07 1.8 af 0.06 1.6 ag 0.02 0.01 0.5 0.3 outline drawing and circuit diagram mitsubishi intelligent power modules PM50RSA120 flat-base type insulated package
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m5 mounting screws 1.47 ~ 1.96 n m mounting torque, m5 main terminal screw 1.47 ~ 1.96 n m module weight (typical) 550 grams supply voltage protected by oc and sc (v d = 13.5 - 16.5v, inverter part, t j = 125 c) v cc(prot.) 800 volts isolation voltage (main terminal to baseplate, ac 1 min.) v rms 2500 volts control sector supply voltage (applied between v up1 -v upc , v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc )v d 20 volts input voltage (applied between u p -v upc , v p -v vpc , w p -v wpc , u n v n w n b r -v nc )v cin 20 volts fault output supply voltage applied between ( u fo -v upc , v fo -v vpc , w fo -v wpc , f o -v nc )v fo 20 volts fault output current (sink current at u fo , v fo , w fo and f o terminal) i fo 20 ma igbt inverter sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 1200 volts collector current, (t c = 25 c) i c 50 amperes peak collector current, (t c = 25 c) i cp 100 amperes supply voltage (applied between p - n) v cc 900 volts supply voltage, surge (applied between p - n) v cc(surge) 1000 volts collector dissipation p c 347 watts brake sector collector-emitter voltage v ces 1200 volts collector current, (t c = 25 c) i c 15 amperes peak collector current, (t c = 25 c) i cp 30 amperes supply voltage (applied between p - n) v cc 900 volts supply voltage, surge (applied between p - n) v cc(surge) 1000 volts collector dissipation p c 138 watts diode forward current i f 15 amperes diode dc reverse voltage v r(dc) 1200 volts mitsubishi intelligent power modules PM50RSA120 flat-base type insulated package
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units control sector over current trip level inverter part oc -20 c t 125 c, v d = 15v 59 112 amperes over current trip level brake part 22 50 amperes short circuit trip level inverter part sc -20 c t 125 c, v d = 15v 183 amperes short circuit trip level brake part 95 amperes over current delay time t off(oc) v d = 15v 10 m s over temperature protection ot trip level 111 118 125 c ot r reset level 100 c supply circuit under voltage protection uv trip level 11.5 12.0 12.5 volts uv r reset level 12.5 volts supply voltage v d applied between v up1 -v upc , 13.5 15 16.5 volts v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc circuit current i d v d = 15v, v cin = 15v, v n1 -v nc 4460ma v d = 15v, v cin = 15v, v xp1 -v xpc 1318ma input on threshold voltage v th(on) applied between 1.2 1.5 1.8 volts input off threshold voltage v th(off) u p -v upc , v p -v vpc , w p -v wpc , 1.7 2.0 2.3 volts u n v n w n b r -v nc pwm input frequency f pwm 3- f sinusoidal 15 20 khz fault output current i fo(h) v d = 15v, v fo = 15v 0.01 ma i fo(l) v d = 15v, v fo = 15v 10 15 ma minimum fault output pulse width t fo v d = 15v 1.0 1.8 ms mitsubishi intelligent power modules PM50RSA120 flat-base type insulated package
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units igbt inverter sector collector cutoff current i ces v ce = v ces , t j = 25 c 1.0 ma v ce = v ces , t j = 125 c10ma emitter-collector voltage v ec -i c = 50a, v d = 15v, v cin = 5v 2.5 3.5 volts collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 50a 2.5 3.5 volts v d = 15v, v cin = 0v, i c = 50a, 2.2 3.2 volts t j = 125 c inductive load switching times t on 0.5 1.0 2.5 m s t rr v d = 15v, v cin = 0 ? 15v 0.15 0.3 m s t c(on) v cc = 600v, i c = 50a 0.4 1.0 m s t off t j = 125 c 2.0 3.0 m s t c(off) 0.7 1.2 m s brake sector collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 15a, 2.8 3.8 volts t j = 25 c v d = 15v, v cin = 0v, i c = 15a, 2.2 3.2 volts t j = 125 c diode forward voltage v fm -i c = 15a, v d = 15v, v cin = 5v 2.5 3.5 volts collector cutoff current i ces v ce = v ces , t j = 25 c1ma v ce = v ces , t j = 125 c10ma mitsubishi intelligent power modules PM50RSA120 flat-base type insulated package
sep.2000 thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q each inverter igbt 0.36 c/watt r th(j-c)f each inverter fwdi 1.0 c/watt r th(c-f)q each brake igbt 0.9 c/watt r th(c-f)f each brake fwdi 2.0 c/watt contact thermal resistance r th(c-f) case to fin per module, 0.027 c/watt thermal grease applied recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across p-n terminals 0 ~ 800 volts v d applied between v up1 -v upc , 15 1.5 volts v n1 -v nc , v vp1 -v vpc , v wp1 -v wpc input on voltage v cin(on) applied between 0 ~ 0.8 volts input off voltage v cin(off) u p -v upc , v p -v vpc , w p -v wpc , u n v n w n b r -v nc 4.0 ~ v d volts pwm input frequency f pwm using application circuit 5 ~ 20 khz minimum dead time t dead input signal 3 3 m s mitsubishi intelligent power modules PM50RSA120 flat-base type insulated package
sep.2000 inverter part mitsubishi intelligent power modules PM50RSA120 flat-base type insulated package 0 1 2 3 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 00 10 50 20 30 40 v d = 15v v cin = 0v t j = 25 o c t j = 125 o c 0 1 2 3 collector-emitter saturation voltage (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) 12 14 16 18 20 22 i c = 50a v cin = 0v t j = 25 o c t j = 125 o c 01 0 output characteristics (typical) collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) 23 20 40 60 13 t j = 25 o c v cin = 0v 15 v d = 17v 10 0 10 1 10 2 10 -1 collector current, i c , (amperes) switching times, t c(on) , t c(off) , ( m s) switching time vs. collector current (typical) 10 0 10 1 v cc = 600v v d = 15v inductive load t j = 25 o c t j = 125 o c t c(on) t c(off) 10 0 10 1 10 2 10 -1 collector current, i c , (amperes) switching times, t on , t off , ( m s) switching time vs. collector current (typical) t (on) 10 0 10 1 t (off) v cc = 600v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 0 10 1 10 2 10 -2 collector reverse current, -i c , (amperes) reverse recovery current, t rr , ( m s) reverse recovery current, i rr , (amperes) reverse recovery characteristics of free-wheel diode (typical) 10 -1 10 0 10 0 10 1 10 2 v cc = 600v v d = 15v inductive load t j = 25 o c t j = 125 o c i rr t rr 0 0.5 1.0 diode forward characteristics emitter-collector voltage, v ec , (volts) collector reverse current, -i c , (amperes) 1.5 2.5 2.0 v d = 15v v cin = 15v t j = 25 o c t j = 125 o c 10 0 10 1 10 2 0 40 60 80 100 120 over current trip level vs. supply voltage (typical) supply voltage, v d , (volts) over current trip level (when v d = 15 is 100%) 01214161820 t j = 25 o c 0 40 60 80 100 120 over current trip level vs. temperature (typical) junction temperature, t j , ( o c) over current trip level (when t j = 25 o c is 100%) -50 0 100 50 150 v d = 15v
sep.2000 inverter part mitsubishi intelligent power modules PM50RSA120 flat-base type insulated package 0 40 60 80 100 120 fault output pulse width vs. temperature (typical) junction temperature, t j , ( o c) fault output pulse width, t fo (ms) -50 0 50 100 150 v d = 15v 10 11 12 13 14 15 control supply voltage drop protection vs. temperature (typical) junction temperature, t j , ( o c) supply current under voltage, uv t , uv r , (volts) -50 150 050 100 uv r uv t time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 0.36 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 1.0 o c/w 10 -2 10 -3
sep.2000 brake part mitsubishi intelligent power modules PM50RSA120 flat-base type insulated package 0 1 2 3 4 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 00 20 4 8 12 16 v d = 15v v cin = 0v t j = 25 o c t j = 125 o c 0 1 2 3 12 20 14 16 18 collector-emitter saturation voltage (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) i c = 15a v cin = 0v t j = 25 o c t j = 125 o c 4 012 0 4 output characteristics (typical) collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) 34 8 12 16 t j = 25 o c v cin = 0v v d = 17v 13 15 0 0.4 0.8 diode forward characteristics (typical) diode forward voltage, v f , (volts) diode forward current, i f , (amperes) 1.2 2.0 1.6 10 0 10 1 10 2 v d = 15v v cin = 15v t j = 25 o c t j = 125 o c time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 0.9 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 2.0 o c/w 10 -2 10 -3
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